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IXTN46N50L
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
SOT-227B (IXTN) Outline
g fs
V DS = 10 V; I D = 0.5 ? I D25 , Note 1
7
10
13
S
C iss
7000
pF
C oss
C rss
t d(on)
t r
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 15 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
900
170
40
50
pF
pF
ns
ns
t d(off)
t f
Q g(on)
R G
= 2 Ω (External),
80
42
260
ns
ns
nC
(M4 screws (4x) supplied)
Q gs
Q gd
R thJC
R thCS
V GS = 15 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
85
125
0.05
nC
nC
0.18 ° C/W
° C/W
Safe Operating Area Specification
Symbol
SOA
Test Conditions
V DS = 400 V, I D = 0.6 A, T C = 90°C
Min.
240
Typ.
Max.
W
Source-Drain Diode
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Symbol
Test Conditions
Min. Typ. Max.
I S
I SM
V SD
V GS = 0 V
Repetitive; pulse width limited by T JM
I F = I S , V GS = 0 V,
46
100
1.5
A
A
V
Note 1
t rr
I F = I S , -dt/dt = 100 A/ μ s, V R = 100 V
600
ns
Note 1: Pulse test, t < 300 μ s, duty cycle, d ≤ 2 %
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots; but
also may yet contain some information supplied during a pre-production design evaluation. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or moreof the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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